News & Events

Press Releases
Posted Date: September 26, 2014

Troy, MI, September 22, 2014 – The PanScan-Freedom LT is an innovative new closed-cycle cryogen-free system for stable low temperature performance, unprecedented low drift, exceptional spectroscopy performance, and atomic resolution in a surprisingly compact, simple, and affordable package.  PanScan-Freedom LT system features 15 K to 400 K operation without the expense and frustration of using liquid cryogens.  PanScan-Freedom LT redefines helium-free low temperature performance, with an unprecedented XY drift as low as 0.2 Å/hour and Z drift as low as 0.2 Å/day.

RHK is to unveil the PanScan-Freedom LT at the 2014 AVS 61st international meeting being held in Baltimore, November 9-14. Visitors to the conference may see the system first hand in booth #410. (

PanScan-Freedom LT incorporates RHK’s purpose-built hardware, including the groundbreaking R9 control electronics, for lowest noise, highest performance, and industry leading cryogen-free low temperature performance.

Uniquely designed for easy adaptation, PanScan-Freedom LT can also integrate with existing chambers to provide an affordable, small footprint LT UHV SPM station on other analysis or process instruments already in place in a laboratory.  The clever design of the closed cycle module also provides an easy upgrade path for existing PanScan systems, protecting the customer’s investment in their research.

RHK Technology, Inc. manufactures ultra-high vacuum scanning probe microscopes (UHV SPM), Control Systems, and Nano-Optical instruments for research in major universities and government laboratories around the globe. RHK is based in Troy, MI, USA.

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Press Releases
Posted Date: February 24, 2014

R9 Press Release
Allen Vallei
Rev. Feb 15 2014

RHK Ships 100th R9 Control System
TROY, MI February 17, 2014

RHK Technology, Inc. announced shipment of its 100th R9 Control System for Scanning Probe Microscopes. The latest in RHK’s long history of advances, R9 breaks new ground with its revolutionary design: a totally integrated AFM/STM single-box solution. R9 combines all-digital, ultra-fast, ultra-low-noise electronics with an interface tailored especially for SPM scientists.

Observing the 100-unit milestone, Adam Kollin, RHK President and driving force behind R9, said, “We’re very proud to achieve this so quickly. The number of R9 just keeps climbing, along with very positive feedback from nanotech researchers around the world. We built R9 to be the best and it’s proving so every day.”

R9 Product and Tech Support Manager Ken Kollin added, “Customers appreciate the unique depth of capability plus ease of use R9 provides. Soon we’ll add even more with free upgrades for deeper automation with LabVIEW and MATLAB, advanced drift correction, new spectroscopy modes, and additional PLLs and lock-in amplifiers.” To mark the milestone, RHK is holding live R9 Webinars and demonstrations world-wide.

RHK Technology, Inc. manufactures ultra-high vacuum scanning probe microscopes (UHV SPM), Control Systems, and Nano-Optical instruments for research in major universities and government laboratories around the globe. RHK is based in Troy, MI, USA.

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Image of the Month
Posted Date: August 1, 2013

Atomically resolved STM images from the Pd (110)-Ic(2×2) phase together with atomic structure models. Atomic distances are 5.5 Å in (−110) and 4.8 Å in (−111). The long red arrow points along (−110).


STM image of mixed the c(2×2) and q-hex phases.

Reference: J. Chem. Phys. 137, 204703 (2012); doi: 10.1063/1.4768165

Credits: Mats Göthelid, Michael Tymczenko, Winnie Chow, Sareh Ahmadi, Shun Yu, Benjamin Bruhn, Dunja Stoltz, Henrik von Schenck, Jonas Weissenrieder, and Chenghua Sun. – Materialfysik, ICT Electrum 229, Kungliga Tekniska Högskolan (KTH) and Australia Institute for Bioengineering and Nanotechnology, The University of Queensland

Microscope: RHK VT UHV STM/AFM Model UHV3500

Control System: RHK Technology SPM1000

Abstract: We use photoelectron spectroscopy, low energy electron diffraction, scanning tunneling microscopy, and density functional theory to investigate coverage dependent iodine structures on Pd(110). At 0.5 ML (monolayer), a c(2 × 2) structure is formed with iodine occupying the four-fold hollow site. At increasing coverage, the iodine layer compresses into a quasi-hexagonal structure at 2/3 ML, with iodine occupying both hollow and long bridge positions. There is a substantial difference in electronic structure between these two iodine sites, with a higher electron density on the bridge bonded iodine. In addition, numerous positively charged iodine near vacancies are found along the domain walls. These different electronic structures will have an impact on the chemical properties of these iodine atoms within the layer.

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Image of the Month
Posted Date: July 1, 2013

12nm x 12nm STM and IETS maps simultaneously acquired on the surface of the 9 ML Pb island at a 1 nA tunneling current.The STM image (a) was obtained at a tunnel bias of 750 mV. The IETS image (b) was acquired at a tunnel bias of 9 mV.(c) Cross section of the IETS image in (b)


The inelastic electron tunneling spectrum measured on top of the 9 ML Pb island. Resonant phonon emission peaks develop at a 9 mV tunnel bias. Inset: tunnel I-V curve for the same island measured in a broader bias range.Steps on this curve are due to QW resonances from transverse electron interference. The decrease of the barrier height at large bias was compensated by a slow increase of a tunneling gap, at a rate of 0.4 Å per |V|.

PhysRevLett.109.166402 DOI 10.1103/Physlet.109.166402

Igor Altfeder, K. A. Matveev, A. A. Voevodin

RHK Technology VT UHV STM Model UHV300

Control System:
RHK Technology SPM 1000

Thin Pb films epitaxially grown on 7 7 reconstructed Si(111) represent an ideal model system for studying the electron-phonon interaction at the metal-insulator interface. For this system, using a combination of scanning tunneling microscopy and inelastic electron tunneling spectroscopy, we performed direct real-space imaging of the electron-phonon coupling parameter. We found that ! increases when the electron scattering at the Pb=Sið111Þ interface is diffuse and decreases when the electron scattering is specular. We show that the effect is driven by transverse redistribution of the electron density inside a quantum well.

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