In0.2Ga0.8As / GaAs multi-quantum well structure. InGaAs layers appear brighter than the GaAs layers (right). Within the InGaAs layer the In atoms appear as bright spots (lower right).
Also, visible bright spots in the GaAs layer indicate that some Indium migrated into the GaAs layer during growth. Note that the interface between the GaAs and InGaAs layer appears rough on the atomic scale. Closer look reveals that the GaAs on InGaAs interface is rougher than the GaAs on InGaAs interface (growth direction <001> from botton right to to left as indicated).
Images courtesy of J.F. Zheng, F. Ogletree, E. Weber and M. Salmeron, Lawrence Berkeley Labs
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