Description:
UHV STM image acquired with the Omicron STM-1 and the SPM1000 control system. High resolution of Si(100)-2x1 after etching by Cl. Etching and diffusion of vacancies produced large pits and dimer vacancy lines were one atomic layer in depth. Regrowth islands were formed by Si adatoms that migrated from the vacancy. Cl atoms occupy the two Si dangling bonds of a dimer and produced two bright features with a dark center line. Elliptical structures correspond to bare Si dimers. The image was taken at room temperature.

Courtesy of John H. Weaver, University of Illinois


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