RHK SPM 1000
The image shows a 3D view (with artificially enhanced z) of an InGaAs quantum dot in a GaAs matrix. This image was acquired on the (110) surface produced by cleaving a GaAs wafer, thereby allowing the cross section of the buried interface to be viewed. The characteristic chains perpendicular to the (001) growth direction are oriented from front to back in this view. The contrast in the image is created mainly by two effects a) electrical contrast caused by additional quantum dot states above this dot and b) strain due to a lattice mismatch of 5%-7% between the InGaAs and the GaAs on the (110) cleavage surface. The sample was both cleaved and imaged under UHV conditions.
Courtesy of H. Eisele, L. Ivanova, A. Lenz, R. Timm und M. Dähne
Inst. f. Festkörperphysik,
TU Berlin
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